Holmium and titanium oxide nanolaminates by atomic layer deposition
2014 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 565, 165-171 p.Article in journal (Refereed) Published
Nanolaminate (nanomultilayer) thin films of TiO2 and Ho2O3 were grown on Si(001) substrates by atomic layer deposition at 300 degrees C from alkoxide and beta-diketonate based metal precursors and ozone. Individual layer thicknesses were 2 nm for TiO2 and 4.5 nm for Ho2O3. As-deposited films were smooth and X-ray amorphous. After annealing at 800 degrees C and higher temperatures the nanolaminate structure was destroyed by solid-state reaction to form Ho2Ti2O7. The films demonstrated diamagnetic or paramagnetic behaviour in the as-deposited state. After annealing, the films possessed net magnetic moment, allowing one to record saturation magnetization and weak coercivity.
Place, publisher, year, edition, pages
Elsevier , 2014. Vol. 565, 165-171 p.
Atomic layer deposition; Holmium oxide; Titanium oxide; Holmium titanate; Multilayer; Nanolaminate; Magnetic materials
IdentifiersURN: urn:nbn:se:liu:diva-110699DOI: 10.1016/j.tsf.2014.06.039ISI: 000341054600027OAI: oai:DiVA.org:liu-110699DiVA: diva2:749242
Funding Agencies|Finnish Centre of Excellence in Atomic Layer Deposition (Academy of Finland); Knut and Alice Wallenberg Foundation (Sweden); Estonian Research Agency [IUT-24, PUT170]2014-09-232014-09-192016-08-31