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Holmium and titanium oxide nanolaminates by atomic layer deposition
University of Helsinki, Finland University of Tartu, Estonia .
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
NICPB, Estonia .
University of Helsinki, Finland .
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2014 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 565, 165-171 p.Article in journal (Refereed) Published
Abstract [en]

Nanolaminate (nanomultilayer) thin films of TiO2 and Ho2O3 were grown on Si(001) substrates by atomic layer deposition at 300 degrees C from alkoxide and beta-diketonate based metal precursors and ozone. Individual layer thicknesses were 2 nm for TiO2 and 4.5 nm for Ho2O3. As-deposited films were smooth and X-ray amorphous. After annealing at 800 degrees C and higher temperatures the nanolaminate structure was destroyed by solid-state reaction to form Ho2Ti2O7. The films demonstrated diamagnetic or paramagnetic behaviour in the as-deposited state. After annealing, the films possessed net magnetic moment, allowing one to record saturation magnetization and weak coercivity.

Place, publisher, year, edition, pages
Elsevier , 2014. Vol. 565, 165-171 p.
Keyword [en]
Atomic layer deposition; Holmium oxide; Titanium oxide; Holmium titanate; Multilayer; Nanolaminate; Magnetic materials
National Category
Physical Sciences
URN: urn:nbn:se:liu:diva-110699DOI: 10.1016/j.tsf.2014.06.039ISI: 000341054600027OAI: diva2:749242

Funding Agencies|Finnish Centre of Excellence in Atomic Layer Deposition (Academy of Finland); Knut and Alice Wallenberg Foundation (Sweden); Estonian Research Agency [IUT-24, PUT170]

Available from: 2014-09-23 Created: 2014-09-19 Last updated: 2016-08-31

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Lu, JunHultman, Lars
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