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Zinc-Vacancy–Donor Complex: A Crucial Compensating Acceptor in ZnO
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7640-8086
University of Oslo, Norway.
University of Oslo, Norway.
University of Oslo, Norway.
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2014 (English)In: Physical Review Applied, ISSN 2331-7019, Vol. 2, no 021001Article in journal, Letter (Refereed) Published
Abstract [en]

The aluminum–zinc-vacancy (Al Zn −V Zn ) complex is identified as one of the dominant defects in Al-containing n -type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically favorable over the isolated V Zn , binding more than 90% of the stable V Zn ’s generated by the irradiation. It acts as a deep acceptor with the (0/− ) energy level located at approximately 1 eV above the valence band. Such a complex is concluded to be a defect of crucial and general importance that limits the n -type doping efficiency by complex formation with donors, thereby literally removing the donors, as well as by charge compensation.

Place, publisher, year, edition, pages
American Physical Society , 2014. Vol. 2, no 021001
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Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-109930DOI: 10.1103/PhysRevApplied.2.021001ISI: 000344332700001OAI: oai:DiVA.org:liu-109930DiVA, id: diva2:741666
Available from: 2014-08-28 Created: 2014-08-28 Last updated: 2018-04-25Bibliographically approved

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Stehr, Jan EricChen, WeiminBuyanova, Irina
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