Recombination dynamics of a localized exciton bound at basal stacking faults within the m-(p)lane ZnO film
2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 1, 011106- p.Article in journal (Refereed) Published
We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014. Vol. 105, no 1, 011106- p.
IdentifiersURN: urn:nbn:se:liu:diva-109886DOI: 10.1063/1.4887280ISI: 000339664900006OAI: oai:DiVA.org:liu-109886DiVA: diva2:741570
Funding Agencies|National Science Council of Taiwan [NSC-99-2112-M-006-017-MY3, NSC-100-2112-M-213-002-MY3, NSC-102-2112-M-006-012-MY3]2014-08-282014-08-282014-09-26Bibliographically approved