Homo-epitaxial growth on low-angle off cut 4H-SiC substrate
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications Inc., 2014, Vol. 778-780, 131-134 p.Conference paper (Refereed)
The growth of 4H-SiC epilayers on 1.28 degrees off-cut substrates is reported in this study and comparison when using standard 4 degrees and 8 degrees off-cut substrates is added. Growth at high temperature is needed for the polytype stability, whereas low C/Si is requested to decrease both triangular defects density and roughness of the grown surface. An in-situ etching with Si rich ambient allows the growth of epilayers with specular surface. The formation of Si droplets can be observed on the grown surfaces when lowering the growth temperature and appears first for the high off-cut angle.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014. Vol. 778-780, 131-134 p.
, Materials Science Forum, ISSN 1662-9752 ; 778-780
epitaxy; CVD; low-off axis; morphology; AFM
IdentifiersURN: urn:nbn:se:liu:diva-108190DOI: 10.4028/www.scientific.net/MSF.778-780.131ISI: 000336634100030OAI: oai:DiVA.org:liu-108190DiVA: diva2:729510
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), Miyazaki, Japan, Sep. 29-Oct 04, 2013