Effect of process parameters on dislocation density in thick 4H-SiC epitaxial layers grown by chloride-based CVD on 4 degrees off-axis substrates
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 159-162 p.Conference paper (Refereed)
The effect of process parameters such as growth temperature, C/Si ratio, etching time, and Si/H2 ratio on dislocation density was investigated by performing KOH etching on 100 mu m thick epitaxial layers grown on 4 degrees off axis 4H-SiC substrates at various growth conditions by a chemical vapor deposition (CVD) process using a chloride-based chemistry to achieve growth rates exceeding 100 mu m/h. We observe that the growth temperature and the growth rate have no significant influence on the dislocation density in the grown epitaxial layers. A low C/Si ratio increases the density of threading screw dislocations (TSD) markedly. The basal plane dislocation (BPD) density was reduced by using a proper in-situ etch prior to growth.
Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 159-162 p.
, Materials Science Forum, ISSN 1662-9752 ; 778-780
Silicon Carbide; SiC; CVD; Dislocation; 4 degrees off-axis substrates; Epitaxial layers
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-108191DOI: 10.4028/www.scientific.net/MSF.778-780.159ISI: 000336634100037OAI: oai:DiVA.org:liu-108191DiVA: diva2:729509
The International Conference on Silicon Carbide and Related Materials, September 29-October 4, 2013, Phoenix Seagaia Resort, Miyazaki, Japan