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Electrical and optical characterization of InP nanowire-based photodetectors
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE).
2014 (English)Independent thesis Basic level (degree of Bachelor), 10 credits / 15 HE creditsStudent thesis
Abstract [en]

This thesis deals with electrical and optical characterization 

of p+i–n+ nanowire-based photodetectors/solar 

cells. I have investigated their I-V performance

and found that all of them exhibit a clear rectifying

behavior with an ideality factor around 2.2 at 300K. 

used Fourier transform infrared spectroscopy to extract their

optical properties. From the spectrally resolved photocurrent

data, I conclude that the main photocurrent is generated in the

i-segment of the nanowire (NW) p-i-n junctions, with negligible 

contribution from the substrate.


I also used a C-V technique to investigate the

impurity/doping profiles of the NW p+-i-n+ junction. 

The technique has been widely used for investigations

of doping profiles in planar p-n junctions, in particular

with one terminal (n or p) highly doped. To verify the

accuracy of the technique, I also used a planar Schottky 

sample with an already known doping profile for a test 

experiment. The result is very similar to the actual data.

When we used the technique to investigate the doping

level in the NWs photodetectors grown on InP substrates,

the results show a very high capacitance above 800pF

which most likely is due to the influence of the parasitic

capacitance from the insulating layer of SiO2. Thus,

 a new sample design is required to investigate the

 doping profiles of NWs. 

Place, publisher, year, edition, pages
2014. , 41 p.
Keyword [en]
IR photodetectors, electrical characteristics, optical characteristics, nanophotonics, InP, nanowires.
National Category
Engineering and Technology
URN: urn:nbn:se:hh:diva-25733OAI: diva2:726676
Subject / course
Electrical Engineering
Available from: 2014-06-25 Created: 2014-06-18 Last updated: 2014-06-25Bibliographically approved

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