Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC
2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 115, no 14, 143705- p.Article in journal (Refereed) Published
In this study, to reveal the origin of the Z(1/2) center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z(1/2) center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z(1/2) concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (V-C) measured by EPR under light illumination can well be explained with the Z(1/2) concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z(1/2) center originates from a single V-C.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014. Vol. 115, no 14, 143705- p.
IdentifiersURN: urn:nbn:se:liu:diva-106850DOI: 10.1063/1.4871076ISI: 000334680400031OAI: oai:DiVA.org:liu-106850DiVA: diva2:720122