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Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Social and Welfare Studies, Learning, Aesthetics, Natural science. Linköping University, Faculty of Educational Sciences.
Centre Europeen Ceram, France .
Grenoble INP, France .
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2014 (English)In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 3, no 4, P75-P81 p.Article in journal (Refereed) Published
Abstract [en]

High quality double-position-boundaries free 3C-SiC epilayers have been successfully grown on on-axis (0001) 4H-SiC by chemical vapor deposition at optimized conditions as observed with optical microscopy and X-ray diffraction. The effect of the growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H-2 ratio, N-2 addition and pressure, on the quality of the grown layers is investigated. Different techniques, including microscopic and spectroscopic techniques, are used to characterize the epilayers. High resolution X-ray diffraction shows 2 theta-omega curve with full width at half maximum of only 16 arcsec for the (111) reflection detected from a 35 mu m thick 3C-SiC layer, showing the good structural quality of the layer. Reciprocal space maps confirm the absence of double-position-boundaries in a large depth of the layers. Low temperature photoluminescence measurement shows clear near-bandgap emission with sharp and single peaks, which further verifies the high quality of the epilayers.

Place, publisher, year, edition, pages
Electrochemical Society , 2014. Vol. 3, no 4, P75-P81 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-106298DOI: 10.1149/2.012404jssISI: 000333570300008OAI: diva2:715715
Available from: 2014-05-06 Created: 2014-05-05 Last updated: 2015-06-09Bibliographically approved
In thesis
1. CVD solutions for new directions in SiC and GaN epitaxy
Open this publication in new window or tab >>CVD solutions for new directions in SiC and GaN epitaxy
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding.

SiC is a promising wide band gap semiconductor material which could be utilized for fabricating high-power and high-frequency devices. 3C-SiC is the only polytype with a cubic structure and has superior physical properties over other common SiC polytypes, such as high hole/electron mobility and low interface trap density with oxide. Due to lack of commercial native substrates, 3C-SiC is mainly grown on the cheap silicon (Si) substrates. However, there’s a large mismatch in both lattice constants and thermal expansion coefficients leading to a high density of defects in the epitaxial layers. In paper 1, the new CVD solution for growing high quality double-position-boundaries free 3C-SiC using on-axis 4H-SiC substrates is presented. Reproducible growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H2 ratio, N2 addition and pressure, are covered in this study.

GaN is another attractive wide band gap semiconductor for power devices and optoelectronic applications. In the GaN-based transistors, carbon is often exploited to dope the buffer layer to be semi-insulating in order to isolate the device active region from the substrate. The conventional way is to use the carbon atoms on the gallium precursor and control the incorporation by tuning the process parameters, e.g. temperature, pressure. However, there’s a risk of obtaining bad morphology and thickness uniformity if the CVD process is not operated in an optimal condition. In addition, carbon source from the graphite insulation and improper coated graphite susceptor may also contribute to the doping in a CVD reactor, which is very difficult to be controlled in a reproducible way. Therefore, in paper 2, intentional carbon doping of (0001) GaN using six hydrocarbon precursors, i.e. methane (CH4), ethylene (C2H4), acetylene (C2H2), propane (C3H8), iso-butane (i-C4H10) and trimethylamine (N(CH3)3), have been explored. In paper 3, propane is chosen for carbon doping when growing the high electron mobility transistor (HEMT) structure on a quarter of 3-inch 4H-SiC wafer. The quality of epitaxial layer and fabricated devices is evaluated. In paper 4, the behaviour of carbon doping using carbon atoms from the gallium precursor, trimethylgallium (Ga(CH3)3), is explained by thermochemical and quantum chemical modelling and compared with the experimental results.

GaN is commonly grown on foreign substrates, such as sapphire (Al2O3), Si and SiC, resulting in high stress and high threading dislocation densities. Hence, bulk GaN substrates are preferred for epitaxy. In paper 5, the morphological, structural and luminescence properties of GaN epitaxial layers grown on N-face free-standing GaN substrates are studied since the N-face GaN has advantageous characteristics compared to the Ga-face GaN. In paper 6, time-resolved photoluminescence (TRPL) technique is used to study the properties of AlGaN/GaN epitaxial layers grown on both Ga-face and N-face free-standing GaN substrates. A PL line located at ~3.41 eV is only emerged on the sample grown on the Ga-face substrate, which is suggested to associate with two-dimensional electron gas (2DEG) emission.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2015. 50 p.
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1654
CVD, SiC, GaN, epitaxy
National Category
Physical Sciences
urn:nbn:se:liu:diva-117878 (URN)10.3384/diss.diva-117878 (DOI)978-91-7519-084-6 (print) (ISBN)
Public defence
2015-06-11, Schrödinger, Fysikhuset, Campus Valla, Linköping, 10:15 (English)
Available from: 2015-05-22 Created: 2015-05-12 Last updated: 2015-05-22Bibliographically approved

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