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A low-temperature order-disorder transition in Cu2ZnSnSthin films
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Ångström Solar Center)
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes.
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Ångström Solar Center)
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, no 4, 041911- p.Article in journal (Refereed) Published
Abstract [en]

Cu2ZnSnS4(CZTS) is an interesting material for sustainable photovoltaics, but efficiencies are limitedby the low open-circuit voltage. A possible cause of this is disorder among the Cu and Zn cations, aphenomenon which is difficult to detect by standard techniques. We show that this issue can beovercome using near-resonant Raman scattering, which lets us estimate a critical temperature of 533±10 K for the transition between ordered and disordered CZTS. These findings have deepsignificance for the synthesis of high-quality material, and pave the way for quantitative investigationof the impact of disorder on the performance of CZTS-based solar cells.

Place, publisher, year, edition, pages
2014. Vol. 104, no 4, 041911- p.
National Category
Materials Chemistry Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-219700DOI: 10.1063/1.4863685ISI: 000331209900030OAI: oai:DiVA.org:uu-219700DiVA: diva2:702925
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Swedish Research Council
Available from: 2014-03-05 Created: 2014-03-05 Last updated: 2017-12-05Bibliographically approved

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