Model for electron-beam-induced crystallization of amorphous Me-Si-C (Me = Nb or Zr) thin films
2014 (English)In: Journal of Materials Research, ISSN 0884-2914, Vol. 29, no 23, 2854-2862 p.Article in journal (Refereed) Published
We use transmission electron microscopy (TEM) for in-situ studies of electronbeam-induced crystallization behavior in thin films of amorphous transition metal silicon carbides based on Zr (group 4 element) and Nb (group 5). Higher silicon content stabilized the amorphous structure while no effects of carbon were detected. Films with Nb start to crystallize at lower electron doses than Zr-containing ones. During the crystallization equiaxed MeC grains are formed in all samples with larger grains for Zr (~5nm) compared to Nb (~2nm). Eventually the sample stabilizes and the crystallization process stops. A model is presented where the metal carbide grains nucleate and grow while Si segregates into the remaining amorphous matrix. At a certain Si concentration in the matrix the graingrowth stops.
Place, publisher, year, edition, pages
Materials Research Society, 2014. Vol. 29, no 23, 2854-2862 p.
transmission electron microscopy (TEM); electron irradiation; radiation effects
IdentifiersURN: urn:nbn:se:liu:diva-104926DOI: 10.1557/jmr.2014.345ISI: 000346431100010OAI: oai:DiVA.org:liu-104926DiVA: diva2:700142