Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Ferroelectric Polarization Induces Electric Double Layer Bistability in Electrolyte-Gated Field-Effect Transistors
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7016-6514
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5154-0291
2014 (English)In: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 6, no 1, 438-442 p.Article in journal (Refereed) Published
Abstract [en]

The dense surface charges expressed by a ferroelectric polymeric thin film induce ion displacement within a polyelectrolyte layer and vice versa. This is because the density of dipoles along the surface of the ferroelectric thin film and its polarization switching time matches that of the (Helmholtz) electric double layers formed at the ferroelectric/polyelectrolyte and polyelectrolyte/semiconductor interfaces. This combination of materials allows for introducing hysteresis effects in the capacitance of an electric double layer capacitor. The latter is advantageously used to control the charge accumulation in the semiconductor channel of an organic field-effect transistor. The resulting memory transistors can be written at a gate voltage of around 7 V and read out at a drain voltage as low as 50 mV. The technological implication of this large. difference between write and read-out voltages lies in the non-destructive reading of this ferroelectric memory.

Place, publisher, year, edition, pages
American Chemical Society , 2014. Vol. 6, no 1, 438-442 p.
Keyword [en]
electrolytes; ferroelectric; P(VDF-TrFE); electric double layer; memory; field-effect transistors
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-104116DOI: 10.1021/am404494hISI: 000329586300058OAI: oai:DiVA.org:liu-104116DiVA: diva2:694690
Available from: 2014-02-07 Created: 2014-02-07 Last updated: 2017-12-06

Open Access in DiVA

fulltext(917 kB)502 downloads
File information
File name FULLTEXT01.pdfFile size 917 kBChecksum SHA-512
fda189b3b22ba5d2ca5f27eed9504082ebe4c8105120fcdd27640729a15fe79963983421764f1f07ebfee9e8bd253708c199b5cdaef2e79724630d7df0a692b3
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Fabiano, SimoneCrispin, XavierBerggren, Magnus

Search in DiVA

By author/editor
Fabiano, SimoneCrispin, XavierBerggren, Magnus
By organisation
Physics and ElectronicsThe Institute of Technology
In the same journal
ACS Applied Materials and Interfaces
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 502 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 612 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf