Reststrahl band-assisted photocurrents in epitaxial graphene layers
2013 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 88, no 24, 245425- p.Article in journal (Refereed) Published
We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the materials surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in two-dimensional crystals and other atomic scale structures can be giantly enhanced by their deposition on a substrate with negative dielectric constant.
Place, publisher, year, edition, pages
American Physical Society , 2013. Vol. 88, no 24, 245425- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-103289DOI: 10.1103/PhysRevB.88.245425ISI: 000328686200004OAI: oai:DiVA.org:liu-103289DiVA: diva2:688497