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Magnetotransport in graphene on silicon side of SiC
Institute of Physics ASCR, Praha, Czech Republic.
Institute of Physics ASCR, Praha, Czech Republic.
Institute of Physics ASCR, Praha, Czech Republic.
Institute of Physics ASCR, Praha, Czech Republic.
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2013 (English)In: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 456, no 1, 012038- p.Article in journal (Refereed) Published
Abstract [en]

We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2013. Vol. 456, no 1, 012038- p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-103066DOI: 10.1088/1742-6596/456/1/012038ISI: 000324548700038OAI: diva2:686636
20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics (HMF), Chamonix, France, July 22-27, 2012
Available from: 2014-01-13 Created: 2014-01-13 Last updated: 2014-04-17Bibliographically approved

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Yakimova, Rositsa
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