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Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
University of Nebraska, NE 68588 USA .
University of Nebraska, NE 68588 USA .
University of Nebraska, NE 68588 USA .
University of Nebraska, NE 68588 USA .
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2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 21, 212107- p.Article in journal (Refereed) Published
Abstract [en]

The effective electron mass parameter in Si-doped Al0.72Ga0.28N is determined to be m* = (0.336 +/- 0.020) m(0) from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m* = 0.232m(0) for GaN, an average effective electron mass of m* = 0.376m(0) can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E-1(TO) and one phonon mode behavior of the A(1)(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2013. Vol. 103, no 21, 212107- p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-102781DOI: 10.1063/1.4833195ISI: 000327590400044OAI: oai:DiVA.org:liu-102781DiVA: diva2:683882
Note

Funding Agencies|National Science Foundation|MRSEC DMR-0820521MRI DMR-0922937DMR-0907475EPS-1004094|Swedish Research Council (VR)|2010-3848|Swedish Governmental Agency for Innovation Systems (VINNOVA)|2011-03486|Linkoping Linnaeus Initiative for Novel Functionalized Materials (VR)||VINNOVA||

Available from: 2014-01-07 Created: 2013-12-26 Last updated: 2017-12-06

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