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Modeling Ga-profiles for Cu(In,Ga)Se2 thin film solar cells with varying defect density
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Ångström Solar Center)ORCID iD: 0000-0002-4125-4002
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Ångström Solar Center)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Ångström Solar Center)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Ångström Solar Center)
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2013 (English)In: 23rd International Photovoltaic Science and Engineering Conference; Taipei, Taiwan; October 28 - Nov 1, 2013: Proceedings, 2013Conference paper, Published paper (Refereed)
Abstract [en]

The very best Cu(In,Ga)(S,Se)2 solar cells have a double graded band gap in the absorber, i.e. a notch profile, formed by varying the ratio of Ga to In. If this is a prerequisite or a consequence of high quality deposition methods is something yet of discussion. In this work we have constructed a high efficiency model (HE-T61) based on in-house state-of-the art Cu(In,Ga)Se2 solar cells, with efficiencies above 19 %, and investigated the role of the Ga-profile. Notch-type Ga-profiles have been compared with single graded profiles, and the influence of Ga-dependent defect distribution and metastable defects have been investigated showing that the optimum Ga-profile is dependent on such defect variations. It is also shown that within the HE-T61 model the optimized Ga-profile yields up to 3 % absolute efficiency gain, indicating that there is potential in band gap engineering.

Place, publisher, year, edition, pages
2013.
Keyword [en]
Solar cells, modeling, simulation, Ga-profile
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-211669OAI: oai:DiVA.org:uu-211669DiVA: diva2:679484
Conference
PVSEC-23; 23rd International Photovoltaic Science and Engineering Conference; Taipei, Taiwan; October 28 - Nov 1, 2013
Funder
Swedish Research Council
Available from: 2013-12-16 Created: 2013-11-28 Last updated: 2015-01-08Bibliographically approved

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Modeling Ga-profiles for CIGS thin film solar cells with varying defect density(620 kB)768 downloads
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Frisk, ChristopherPlatzer-Björkman, CharlotteFjällström, ViktorOlsson, JörgenEdoff, Marika
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