Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, 192101- p.Article in journal (Refereed) Published
Si-doped GaN layers grown by metal organic vapor phase epitaxy on m-plane GaN substrates were investigated by low-temperature cathodoluminescence (CL). We have observed stacking fault (SF) related emission in the range of 3.29–3.42 eV for samples with moderate doping, while for the layers with high concentration of dopants, no CL lines related to SFs have been noted. Perturbation of the SF potential profile by neighboring impurity atoms can explain localization of excitons at SFs, while this effect would vanish at high doping levels due to screening.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2013. Vol. 103, 192101- p.
IdentifiersURN: urn:nbn:se:liu:diva-100756DOI: 10.1063/1.4828820ISI: 000327817000031OAI: oai:DiVA.org:liu-100756DiVA: diva2:663433