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Design Considerations for a Self-Powered Gate Driver for Normally-ON SiC Junction Field-Effect Transistors
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0002-1755-1365
2013 (English)In: 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013, IEEE conference proceedings, 2013, 251-257 p.Conference paper, Published paper (Refereed)
Abstract [en]

The very low on-state resistance, the voltagecontrolledgate, and the relative simplicity of fabrication of thenormally-ON silicon carbide junction field effect transistor makethis device the most important player among all state-of-theartsilicon carbide transistors. However, the normally-ON naturecounts as the main factor which keeps this device far frombeing considered as an alternative to the silicon insulated-gatebipolar transistor. A self-powered gate driver without externalpower supply for normally-ON silicon carbide junction field effecttransistors is presented in this paper. The proposed circuit isable to handle the shoot-through current when the devices aresubjected to the dc-link voltage by utilizing the energy associatedwith this current. On the other hand it supplies the necessarynegative gate-source voltage during the steady-state operation. Adetailed description of the operating states of the proposed circuitalong with various design considerations are presented. Fromexperiments which were performed in a half-bridge converter, itis shown that the shoot-through current can be turned off withinapproximately 15 s. Moreover, it is shown that the proposedgate driver can properly switch the devices.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2013. 251-257 p.
Keyword [en]
Silicon carbide, normally-ON JFET, protection circuits, gate-drive units
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
URN: urn:nbn:se:kth:diva-133307DOI: 10.1109/ECCE-Asia.2013.6579105ISI: 000332789100041Scopus ID: 2-s2.0-84883657904ISBN: 978-1-4799-0483-9 (print)OAI: oai:DiVA.org:kth-133307DiVA: diva2:660452
Conference
5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013, Melbourne, VIC, Australia, 3-6 June 2013
Note

QC 20131031

Available from: 2013-10-29 Created: 2013-10-29 Last updated: 2014-04-24Bibliographically approved

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