Magnetron sputtering of epitaxial ZrB2 thin films on 4H-SiC(0001) and Si(111)
2014 (English)In: Physica Status Solidi (a), ISSN 1862-6319, Vol. 211, no 3, 636-640 p.Article in journal (Refereed) Published
Epitaxial ZrB2 thin films were deposited at a temperature of 900 °C on 4H-SiC(0001) and Si(111) substrates by magnetron sputtering from a ZrB2 source at high rate ~80 nm/min. The films were analyzed by thin film X-ray diffraction including pole figure measurements and reciprocal space mapping as well as high resolution electron microscopy.
Place, publisher, year, edition, pages
John Wiley & Sons, 2014. Vol. 211, no 3, 636-640 p.
Zirconium diboride Epitaxial growth Silicon carbide Thin films Magnetron sputtering
IdentifiersURN: urn:nbn:se:liu:diva-99944DOI: 10.1002/pssa.201330308ISI: 000333194100018OAI: oai:DiVA.org:liu-99944DiVA: diva2:658962