Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)
2014 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 550, 285-290 p.Article in journal (Other academic) Published
ZrB2 thin films have been synthesized using direct current magnetron sputtering from a ZrB2 compound target onto 4H-SiC(0001) and Si(100) substrates kept at different temperatures (no heating, 400 °C, and 550 °C), and substrate bias voltage (-20 V to -80 V). Time-of-flight energy elastic recoil detection analysis shows that all the films are near stoichiometric and have a low degree of contaminants, with O being the most abundant (< 1 at.%). The films are crystalline, and their crystallographic orientation changes from 0001 to a more random orientation with increased deposition temperature. X-ray diffraction pole figures and selected area electron diffraction patterns of the films deposited without heating reveal a fiber-texture growth. Four point probe measurements show typical resistivity values of the films ranging from ~95 to 200 μΩcm, decreasing with increased growth temperature and substrate bias.
Place, publisher, year, edition, pages
2014. Vol. 550, 285-290 p.
Zirconium diboride; Silicon carbide; Thin films; Compound target; Industrial scale deposition system; Crystalline films
IdentifiersURN: urn:nbn:se:liu:diva-99942DOI: 10.1016/j.tsf.2013.11.040ISI: 000328499700045OAI: oai:DiVA.org:liu-99942DiVA: diva2:658959