500 degrees C Bipolar Integrated OR/NOR Gate in 4H-SiC
2013 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 34, no 9, 1091-1093 p.Article in journal (Refereed) Published
Successful operation of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter coupled logic is reported from -40 degrees C to 500 degrees C. Nonmonotonous temperature dependence (previously predicted by simulations but now measured) was observed for the transistor current gain; in the range -40 degrees C - 300 degrees C it decreased when the temperature increased, while it increased in the range 300 degrees C-500 degrees C. Stable noise margins of similar to 1 V were measured for a 2-input OR/NOR gate operated on -15 V supply voltage from 0 degrees C to 500 degrees C for both OR and NOR output.
Place, publisher, year, edition, pages
2013. Vol. 34, no 9, 1091-1093 p.
Bipolar junction transistor (BJT), emitter coupled logic (ECL), high-temperature integrated circuits (ICs), OR/NOR gate, silicon carbide (SiC)
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Information and Communication Technology
IdentifiersURN: urn:nbn:se:kth:diva-129618DOI: 10.1109/LED.2013.2272649ISI: 000323982500006ScopusID: 2-s2.0-84883180257OAI: oai:DiVA.org:kth-129618DiVA: diva2:653422
FunderStandUpSwedish Foundation for Strategic Research , RE10-0011
QC 201310042013-10-042013-10-032016-07-18Bibliographically approved