Luminescence of Acceptors in Mg-Doped GaN
2013 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 52, no 8Article in journal (Refereed) Published
Recent photoluminescence (PL) data for Mg-doped GaN at 2 K are discussed, with reference to published theoretical calculations of the electronic level structure. It is concluded that the typical PL peaks at 3.466 eV (acceptor bound exciton ABE1) and the broader 3.27 eV donor-acceptor pair (DAP) PL are the expected standard PL signatures of the substitutional Mg acceptor. Additional broader peaks at 3.455 eV (ABE2) and 3.1 eV are suggested to be related to the same acceptors perturbed by nearby basal plane stacking faults. The low temperature metastability of PL spectra is assigned to a nonradiative metastable deep level.
Place, publisher, year, edition, pages
Japan Society of Applied Physics , 2013. Vol. 52, no 8
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-98151DOI: 10.7567/JJAP.52.08JJ03ISI: 000323883100123OAI: oai:DiVA.org:liu-98151DiVA: diva2:652285
Funding Agencies|K. A. Wallenberg Foundation||Swedish Energy Agency||Li-Li NFM Center at Linkoping University||2013-09-302013-09-302016-08-31