Electronic transport properties in aluminum indium nitride nanorods grown by magnetron sputter epitaxy
2013 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 285, 625-628 p.Article in journal (Refereed) Published
The electronic transport properties of the wide-bandgap aluminum indium nitride (AlInN) nanorods (NRs) grown by ultrahigh-vacuum magnetron sputter epitaxy (MSE) have been studied. The conductivities of the ternary compound nanostructure locates at the value of 15 Q-1 cm -1, which is respectively one and two orders of magnitude lower than the binary GaN and InN counterparts grown by chemical vapor deposition (CVD). The very shallow donor level/band with the activation energy at 11 + 2 meV was obtained by the temperature-dependent measurement. In addition, the photoconductivity has also been investigated. The photoconductive (PC) gain of the NRs device can reach near 2400 under a low bias at 0.1 V and the light intensity at 100W m-2 for ultraviolet response in vacuum. The power-insensitive gain and ambience-dependent photocurrent are also observed, which is attributed to the probable surfacecontrolled PC mechanism in this ternary nitride nanostructure.
Place, publisher, year, edition, pages
Elsevier, 2013. Vol. 285, 625-628 p.
Aluminum indium nitride, Nanorod, Photoconductivity, Magnetron sputter epitaxy
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-98047DOI: 10.1016/j.apsusc.2013.08.102ISI: 000326579400072OAI: oai:DiVA.org:liu-98047DiVA: diva2:651567