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A MMIC GaAs up-converter from 350 MHz to 1835 MHz realized both in a HBT diode-mixer topology and pHEMT resistive FET-mixer topology
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
2006 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

Two mixers for up-conversion from an IF frequency of 350 MHz to a RF frequency of 1835 MHz have been designed and simulated to be used in Ericsson.s radio link system MINI-LINK. One mixer uses diodes in a balanced structure, and the other one use resistive FET-mixers, also in a balanced structure.

Both implemented in a GaAs MMIC process; for the diode mixer TriQuint HBT2 and for the resistive FET-mixer TriQuint 0.25 um pHEMT. The mixers were designed to work with input LO-power of 0 dBm and an IF-power of -20 dBm. For the diode based mixer with an active LO balun the conversion gain is 5.7 dB, P-1dB 15 dBm and the LO-suppression -22 dB. For the resistive FET-mixer the conversion gain is 11 dB, IIP3 26 dBm, P-1dB 15 dBm and the LO-suppression -49 dB. The data given is based on simulations; no wafers have been processed at this time. The chip-area the final design will occupy is approximated to 1.8 mm^2 for the diode mixer and approximately 1.9 mm^2 for the resistive FET-mixer. For both of the mixer types an off-chip balun for the IF-frequency is the only external component needed.

Place, publisher, year, edition, pages
2006. , 103 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-97085ISRN: LITH-ITN-ED-EX--06/019--SEOAI: oai:DiVA.org:liu-97085DiVA: diva2:650292
Subject / course
Electrical Engineering
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Available from: 2013-09-20 Created: 2013-09-04 Last updated: 2013-09-20Bibliographically approved

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CiteExportLink to record
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