A MMIC GaAs up-converter from 350 MHz to 1835 MHz realized both in a HBT diode-mixer topology and pHEMT resistive FET-mixer topology
Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Two mixers for up-conversion from an IF frequency of 350 MHz to a RF frequency of 1835 MHz have been designed and simulated to be used in Ericsson.s radio link system MINI-LINK. One mixer uses diodes in a balanced structure, and the other one use resistive FET-mixers, also in a balanced structure.
Both implemented in a GaAs MMIC process; for the diode mixer TriQuint HBT2 and for the resistive FET-mixer TriQuint 0.25 um pHEMT. The mixers were designed to work with input LO-power of 0 dBm and an IF-power of -20 dBm. For the diode based mixer with an active LO balun the conversion gain is 5.7 dB, P-1dB 15 dBm and the LO-suppression -22 dB. For the resistive FET-mixer the conversion gain is 11 dB, IIP3 26 dBm, P-1dB 15 dBm and the LO-suppression -49 dB. The data given is based on simulations; no wafers have been processed at this time. The chip-area the final design will occupy is approximated to 1.8 mm^2 for the diode mixer and approximately 1.9 mm^2 for the resistive FET-mixer. For both of the mixer types an off-chip balun for the IF-frequency is the only external component needed.
Place, publisher, year, edition, pages
2006. , 103 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-97085ISRN: LITH-ITN-ED-EX--06/019--SEOAI: oai:DiVA.org:liu-97085DiVA: diva2:650292
Subject / course