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Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene
University of Oxford, England.
University of Oxford, England.
National Phys Lab, England.
National Phys Lab, England.
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2013 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 111, no 9, e096601- p.Article in journal (Refereed) Published
Abstract [en]

We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (Ic) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (ρxx=0) shows a [1-(T/Tc)2] dependence and persists up to Tc>45  K at 29 T. With magnetic field Ic was found to increase ∝B3/2 and TcB2. As the Fermi energy approaches the Dirac point, the ν=2 quantized Hall plateau appears continuously from fields as low as 1 T up to at least 19 T due to a strong magnetic field dependence of the carrier density.

Place, publisher, year, edition, pages
American Physical Society , 2013. Vol. 111, no 9, e096601- p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-97659DOI: 10.1103/PhysRevLett.111.096601ISI: 000323610800025OAI: diva2:649989

Funding Agencies|EuroMagNET II||EU|228043|U.K. EPSRC||EU Project ConceptGraphene||NPL Strategic Research Programme||

Available from: 2013-09-19 Created: 2013-09-19 Last updated: 2013-10-08

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