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Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 3, 033508- p.Article in journal (Refereed) Published
Abstract [en]

By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2013. Vol. 103, no 3, 033508- p.
Keyword [en]
Low-Frequency Noise, 1/F Noise, Pmosfets, Mobility, Gate, Si
National Category
Other Physics Topics
Research subject
Electrical Engineering
URN: urn:nbn:se:kth:diva-127503DOI: 10.1063/1.4813850ISI: 000322146300110ScopusID: 2-s2.0-84881492355OAI: diva2:644749
Swedish Foundation for Strategic Research

QC 20130902

Available from: 2013-09-02 Created: 2013-08-30 Last updated: 2015-04-17Bibliographically approved

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Malm, B. Gunnar
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