Negative-U behavior of the Si donor in Al0.77Ga0.23N
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 4, 042101- p.Article in journal (Refereed) Published
Electron paramagnetic resonance (EPR) spectrum of a shallow donor is observed at low temperatures in darkness in Si-doped Al0.77Ga0.23N epitaxial layers grown on 4H-SiC substrates. It is shown from the temperature dependence of the donor concentration on the neutral donor state measured by EPR that Si is a DX (or negative-U) center but behaves as a shallow donor due to a small separation of only ∼3 meV between the neutral state Ed and the lower-lying negative state EDX. The neutral state is found to follow the effective mass theory with Ed ∼ 52–59 meV.
Place, publisher, year, edition, pages
2013. Vol. 103, no 4, 042101- p.
aluminium compounds, effective mass, gallium compounds, III-V semiconductors, impurity states, paramagnetic resonance, semiconductor epitaxial layers, silicon, wide band gap semiconductors
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-96762DOI: 10.1063/1.4816266ISI: 000322406600040OAI: oai:DiVA.org:liu-96762DiVA: diva2:643252