Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Show others and affiliations
2013 (English)In: Silicon Carbide and Related Materials 2012 / [ed] Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications , 2013, Vol. 740-742, 257-262 p.Conference paper, Published paper (Refereed)
Abstract [en]

The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 µm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray techniques and photoluminescence are compared for the evaluation of the crystal quality and purity of the layers.

Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 257-262 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 740-742
Keyword [en]
3C-SiC(111), CVD, Heteroepitaxy, Photoluminescence (PL), X-Ray Diffraction (XRD)
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-96508DOI: 10.4028/www.scientific.net/MSF.740-742.257ISI: 000319785500061ISBN: 978-3-03785-624-6 (print)OAI: oai:DiVA.org:liu-96508DiVA: diva2:642384
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), 2-6 September 2012, St. Petersburg, Russia
Available from: 2013-08-21 Created: 2013-08-20 Last updated: 2014-10-08Bibliographically approved

Open Access in DiVA

fulltext(773 kB)