The charged exciton in an InGaN quantum dot on a GaN pyramid
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 1Article in journal (Refereed) Published
The emission of a charged exciton in an InGaN quantum dot (QD) on top of a GaN pyramid is identified experimentally. The intensity of the charged exciton exhibits the expected competition with that of the single exciton, as observed in temperature-dependent micro-photoluminescence measurements, performed with different excitation energies. The non-zero charge state of this complex is further supported by time resolved micro-photoluminescence measurements, which excludes neutral alternatives of biexciton. The potential fluctuations in the vicinity of the QD that localizes the charge carriers are proposed to be responsible for the unequal supply of electrons and holes into the QD.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2013. Vol. 103, no 1
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-95961DOI: 10.1063/1.4812984ISI: 000321497200036OAI: oai:DiVA.org:liu-95961DiVA: diva2:641707
Funding Agencies|NANO-N consortium||Swedish Foundation for Strategic Research (SSF)||2013-08-192013-08-122015-01-23