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Effect of charged line defects on conductivity in graphene: Numerical Kubo and analytical Boltzmann approaches
Department of Solid State Theory, Institute for Metal Physics, NASU, Kyiv, Ukraine.
Department of Micro and Nanotechnology, DTU Nanotech, Technical University of Denmark, Denmark.
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
2013 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 87, no 19, 195448- p.Article in journal (Refereed) Published
Abstract [en]

Charge carrier transport in single-layer graphene with one-dimensional charged defects is studied theoretically. Extended charged defects, considered an important factor for mobility degradation in chemically vapor-deposited graphene, are described by a self-consistent Thomas-Fermi potential. A numerical study of electronic transport is performed by means of a time-dependent real-space Kubo approach in honeycomb lattices containing millions of carbon atoms, capturing the linear response of realistic size systems in the highly disordered regime. Our numerical calculations are complemented with a kinetic transport theory describing charge transport in the weak scattering limit. The semiclassical transport lifetimes are obtained by computing scattered amplitudes within the second Born approximation. The transport electron-hole asymmetry found in the semiclassical approach is consistent with the Kubo calculations. In the strong scattering regime, the conductivity is found to be a sublinear function of electronic density and weakly dependent on the Thomas-Fermi screening wavelength. We attribute this atypical behavior to the extended nature of one-dimensional charged defects. Our results are consistent with recent experimental reports.

Place, publisher, year, edition, pages
American Physical Society , 2013. Vol. 87, no 19, 195448- p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-96132DOI: 10.1103/PhysRevB.87.195448ISI: 000319802900006OAI: diva2:640753
Available from: 2013-08-14 Created: 2013-08-14 Last updated: 2013-10-02

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