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Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport
University of Lyon, France.
University of Lyon, France.
University of Lyon, France.
University of Lyon, France.
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2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 21, 212108- p.Article in journal (Refereed) Published
Abstract [en]

This work reports on the performances of ohmic contacts fabricated on highly p-type doped 4H-SiC epitaxial layer selectively grown by vapor-liquid-solid transport. Due to the very high doping level obtained, the contacts have an ohmic behavior even without any annealing process. Upon variation of annealing temperatures, it was shown that both 500 and 800 °C annealing temperature lead to a minimum value of the Specific Contact Resistance (SCR) down to 1.3×10−6 Ω⋅cm2. However, a large variation of the minimum SCR values has been observed (up to 4×10−4 Ω⋅cm2). Possible sources of this fluctuation have been also discussed in this paper.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2013. Vol. 102, no 21, 212108- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-96135DOI: 10.1063/1.4809570ISI: 000320620400039OAI: oai:DiVA.org:liu-96135DiVA: diva2:640748
Available from: 2013-08-14 Created: 2013-08-14 Last updated: 2017-12-06

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CiteExportLink to record
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  • apa
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