Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 19, 193506- p.Article in journal (Refereed) Published
High tuneability of residual carbon doping is developed in a hot-wall metalorganic chemical vapor deposition reactor. Two orders of temperature-tuned carbon concentration, from ∼2 × 1018 cm−3 down to ∼1 × 1016 cm−3, can be effectively controlled in the growth of the GaN buffer layer. Excellent uniformity of two-dimensional electron gas (2DEG) properties in AlxGa1−xN/AlN/GaN heterostructure with very high average carrier density and mobility, 1.1 × 1013 cm−2 and 2035 cm2/V·s, respectively, over 3" semi-insulating SiC substrate is realized with the temperature-tuned carbon doping scheme. Reduction of carbon concentration is evidenced as a key to achieve high 2DEG carrier density and mobility.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2013. Vol. 102, no 19, 193506- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-96138DOI: 10.1063/1.4804600ISI: 000320440800103OAI: oai:DiVA.org:liu-96138DiVA: diva2:640744