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Biaxial alignment in off-normally deposited films using highly ionized fluxes
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
2013 (English)Independent thesis Advanced level (degree of Master (Two Years)), 30 credits / 45 HE creditsStudent thesis
Abstract [en]

The influence of highly ionized fluxes on the biaxial alignment in thin films has been investigated by studying the relation between the effect of ionization degrees and different process conditions, including magnetron position, working pressure and substrate bias voltage. In this thesis work, SEM and XRD techniques were employed to study the morphology and crystallographic properties of Cr films grown by High Power Impulse Magnetron Sputtering (HiPIMS) and Direct Current Magnetron Sputtering (DCMS) on Si substrate with a native SiO2 layer.

These Cr films are composed of tilted column structures. Denser films can be observed when the ionization degree is increased or the substrate bias voltage is applied. For the crystallographic texture of the films, it can be seen that the films grown by fluxes with higher ionization degrees are possible to form a better biaxial alignment. However, it still highly depends on the process conditions, which influence the atomistic process during deposition.

In addition, several specific features are found in this thesis work, e.g. texture transformation and double biaxial texture. It is shown that, with specific process conditions, some of the grains are able to exhibit different orientations, changing the crystallographic texture of films.

Place, publisher, year, edition, pages
2013. , 56 p.
Keyword [en]
Biaxial alignment, biaxial texture, out-of-plane orientation, in-plane orientation, HiPIMS, HPPMS, Chromium
National Category
Materials Engineering
URN: urn:nbn:se:liu:diva-94512ISRN: LITH-IFM-A-EX--13/2806--SEOAI: diva2:632593
Subject / course
Material Physics
2013-06-05, Mott, 10:15 (English)
Available from: 2013-06-25 Created: 2013-06-25 Last updated: 2013-06-25Bibliographically approved

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Wu, Tsung-Han
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Department of Physics, Chemistry and BiologyThe Institute of Technology
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