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Recombination in ingot cast siliconsolar cells
Fraunhofer ISE, Laboratory and Servicecenter, Auf der Reihe 2, 45884 Gelsenkirchen, Germany.ORCID iD: 0000-0003-2181-3820
Fraunhofer ISE, Laboratory and Servicecenter, Auf der Reihe 2, 45884 Gelsenkirchen, Germany.
Fraunhofer ISE, Laboratory and Servicecenter, Auf der Reihe 2, 45884 Gelsenkirchen, Germany.
Fraunhofer ISE, Laboratory and Servicecenter, Auf der Reihe 2, 45884 Gelsenkirchen, Germany.
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2011 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 208, no 4, p. 760-768Article in journal (Refereed) Published
Abstract [en]

Minority carrier recombination is studied in multicrystalline ingot cast silicon solar cells. The normalized recombination strength G of dislocations is obtained by correlating topogramsof the internal quantum efficiency (IQE) with those of the dislocation densityr.G is obtained by fitting an extended theory of Donolato to the experimental data. The measured G-values vary significantly between adjacent dislocation clusters and correlate with the spatial pattern of the dislocations. All G-values are strongly dependent on the parameters of the solar cell process. The influence of phosphorus diffusion and hydrogenation is shown. After solidification of the silicon, impurities from the crucible enter the ingot and deteriorate its border regions during cooling to room temperature. These deteriorated border regions can be significantly improved byan additional low temperature anneal that is applied after phosphorus diffusion. The experiments indicate that the mechanism of the anneal is external phosphorus gettering into the emitter.

Place, publisher, year, edition, pages
2011. Vol. 208, no 4, p. 760-768
Keywords [en]
silicon defect dislocation precipitate gettering solar cell
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-27899DOI: 10.1002/pssa.201084022ISI: 000289513700003OAI: oai:DiVA.org:kau-27899DiVA, id: diva2:628889
Available from: 2013-06-14 Created: 2013-06-14 Last updated: 2017-12-06Bibliographically approved

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