Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Nanoprobe X-ray fluorescence characterization of defects in large-area solar cells
Massachusetts Institute of Technology, Cambridge, USA .
Massachusetts Institute of Technology, Cambridge, USA .
Fraunhofer ISE, Laboratory and Servicecenter, Auf der Reihe 2, Gelsenkirchen, Germany .ORCID iD: 0000-0003-2181-3820
USA.
Show others and affiliations
2011 (English)In: Energy & Environmental Science, ISSN 1754-5692, E-ISSN 1754-5706, Vol. 4, p. 4252-4257Article in journal (Refereed) Published
Abstract [en]

The performance of centimeter-sized energy devices is regulated by inhomogeneously distributednanoscale defects. To improve device efficiency and reduce cost, accurate characterization of thesenanoscale defects is necessary. However, the multiscale nature of this problem presentsa characterization challenge, as non-destructive techniques often specialize in a single decade of lengthscales, and have difficulty probing non-destructively beneath the surface of materials with sub-micronspatial resolution. Herein, we push the resolution limits of synchrotron-based nanoprobe X-rayfluorescence mapping to 80 nm, to investigate a recombination-active intragranular defect in industrialsolar cells. Our nano-XRF measurements distinguish fundamental differences between benign anddeleterious dislocations in solar cell devices: we observe recombination-active dislocations to containa high degree of nanoscale iron and copper decoration, while recombination-inactive dislocationsappear clean. Statistically meaningful high-resolution measurements establish a connection betweencommercially relevant materials and previous fundamental studies on intentionally contaminatedmodel defect structures, pointing the way towards optimization of the industrial solar cell process.Moreover, this study presents a hierarchical characterization approach that can be broadly extended toother nanodefect-limited energy systems with the advent of high-resolution X-ray imaging beamlines

Place, publisher, year, edition, pages
2011. Vol. 4, p. 4252-4257
Keywords [en]
silicon, defect, dislocation, solar cell
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-27897DOI: 10.1039/c1ee02083hISI: 000295888100060OAI: oai:DiVA.org:kau-27897DiVA, id: diva2:628887
Available from: 2013-06-14 Created: 2013-06-14 Last updated: 2017-12-06Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Search in DiVA

By author/editor
Rinio, Markus
In the same journal
Energy & Environmental Science
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 167 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf