Effect of thermal annealing on defects in post-growth hydrogenated GaNP
2013 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 10, no 4, 561-563 p.Article in journal (Refereed) Published
Effect of thermal annealing on paramagnetic centers in post-growth hydrogenated GaN0.0081P0.9919 epilayer is examined by means of photoluminescence and optically detected magnetic resonance (ODMR) techniques. In recent studies, several Ga-interstitial (Gai) related centers were found to be activated by the presence of hydrogen in the hydrogenated GaNP alloys. These centers compete with near-band edge radiative recombination. Annealing at 400 ºC in Ar-ambient is found to cause quenching of the Gai-related ODMR signals that were activated by post-growth hydrogenation. We tentatively ascribe this effect to dissociation of the H-Gai complexes and subsequent out-diffusion of H.
Place, publisher, year, edition, pages
John Wiley & Sons, 2013. Vol. 10, no 4, 561-563 p.
ODMR, dilute nitrides, Ga interstitial, post-growth hydrogenation, annealing
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-93873DOI: 10.1002/pssc.201200353ISI: 000317284600002OAI: oai:DiVA.org:liu-93873DiVA: diva2:627312
E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds. Strasbourg, France. May 14-18, 2012.