Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 19, 191101- p.Article in journal (Refereed) Published
We compare experimental data with three-dimensional numerical calculations of the local minority current in an InGaAs/GaAs transistor vertical-cavity surface-emitting laser at different bias levels. It is demonstrated that lateral potential variations within the device greatly affect the transistor operating conditions. As a result, it locally operates in the active mode in the center of the device, allowing for efficient stimulated recombination, while it globally operates in the saturation regime as reflected by the measured current-voltage characteristics. This allows for excellent laser performance, including mW-range output power, sub-mA threshold base current, and continuous-wave operation well above room temperature.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2013. Vol. 102, no 19, 191101- p.
current distribution, gallium arsenide, heterojunction bipolar transistors, III-V semiconductors, indium compounds, integrated optoelectronics, laser beams, laser cavity resonators, laser modes, numerical analysis, optical saturation, quantum wells, surface emitting lasers
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-122997DOI: 10.1063/1.4803175ISI: 000320440800001ScopusID: 2-s2.0-84877935923OAI: oai:DiVA.org:kth-122997DiVA: diva2:624270
FunderSwedish Research Council, 2010-4386
QC 201306262013-05-302013-05-302014-12-03Bibliographically approved