A 6kW, 200kHz boost converter with parallel-connected SiC bipolar transistors
2013 (English)In: 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference And Exposition (APEC 2013), IEEE Press, 2013, 1991-1998 p.Conference paper (Refereed)
This paper describes issues related to design,construction and experimental verification of a 6 kW, 200 kHzboost converter (300 V/600 V) built with four parallel-connectedSiC bipolar transistors. The main focus is on parallel-connectionof the SiC BJTs: crucial device parameters and influence of theparasitics are discussed. A special solution for the base-driveunit, based on the dual-source driver concept, is also presentedin this paper. Experimental verification of the boost converterwith special attention to power loss measurement and thermalperformance of the parallel-connected transistors is also shown.The peak efficiency measured at nominal conditions wasapproximately 98.5% where the base-drive unit causes around 10% of the total losses.
Place, publisher, year, edition, pages
IEEE Press, 2013. 1991-1998 p.
Silicon carbide, bipolar junction transistor, high switching frequency, high efficiency
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Järnvägsgruppen - Elsystem
IdentifiersURN: urn:nbn:se:kth:diva-122888DOI: 10.1109/APEC.2013.6520568ISI: 000324988602019ScopusID: 2-s2.0-84879401244ISBN: 978-1-4673-4353-4OAI: oai:DiVA.org:kth-122888DiVA: diva2:623886
28th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2013; Long Beach, CA; United States; 17 March 2013 through 21 March 2013
QC 201307102013-05-292013-05-292014-01-20Bibliographically approved