An Experimental Evaluation of SiC Switches in Soft-Switching Converters
2014 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, no 5, 2527-2538 p.Article in journal (Refereed) Published
Soft-switching converters equipped with insulated gate bipolar transistors (IGBTs) in silicon (Si) have to be dimensioned with respect to additional losses due to the dynamic conduction losses originating from the conductivity modulation lag. Replacing the IGBTs with emerging silicon carbide (SiC) transistors could reduce not only the dynamic conduction losses but also other loss components of the IGBTs. In the present paper, therefore, several types of SiC transistors are compared to a state-of-the-art 1200-V Si IGBT. First, the conduction losses with sinusoidal current at a fixed amplitude (150 A) are investigated at different frequencies up to 200 kHz. It was found that the SiC transistors showed no signs of dynamic conduction losses in the studied frequency range. Second, the SiC transistors were compared to the Si IGBT in a realistic soft-switching converter test system. Using a calorimetric approach, it was found that all SiC transistors showed loss reductions of more than 50%. In some cases loss reductions of 65% were achieved even if the chip area of the SiC transistor was only 11% of that of the Si IGBT. It was concluded that by increasing the chip area to a third of the Si IGBT, the SiC vertical trench junction field-effect transistor could yield a loss reduction of approximately 90%. The reverse conduction capability of the channel of unipolar devices is also identified to be an important property for loss reductions. A majority of the new SiC devices are challenging from a gate/base driver point-of-view. This aspect must also be taken into consideration when making new designs of soft-switching converters using new SiC transistors.
Place, publisher, year, edition, pages
IEEE Press, 2014. Vol. 29, no 5, 2527-2538 p.
Bipolar junction transistor (BJT), conductivity modulation, insulated gate bipolar transistor (IGBT), junction field-effect transistor (JFET), metal-oxide-semiconductor FET (MOSFET), resonant converters, silicon carbide (SiC), soft switching
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Järnvägsgruppen - Elsystem
IdentifiersURN: urn:nbn:se:kth:diva-122678DOI: 10.1109/TPEL.2013.2265380ISI: 000329991500038ScopusID: 2-s2.0-84893080393OAI: oai:DiVA.org:kth-122678DiVA: diva2:623257
QC 201307102013-05-262013-05-262014-03-05Bibliographically approved