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System Level Exploration of RRAM for SRAM Replacement
Linköping University, Department of Electrical Engineering, Electronics System. Linköping University, The Institute of Technology.
2013 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

Recently an effective usage of the chip area plays an essential role for System-on-Chip (SOC) designs. Nowadays on-chip memories take up more than 50%of the total die-area and are responsible for more than 40% of the total energy consumption. Cache memory alone occupies 30% of the on-chip area in the latest microprocessors.

This thesis project “System Level Exploration of RRAM for SRAM Replacement” describes a Resistive Random Access Memory (RRAM) based memory organizationfor the Coarse Grained Reconfigurable Array (CGRA) processors. Thebenefit of the RRAM based memory organization, compared to the conventional Static-Random Access Memory (SRAM) based memory organization, is higher interms of energy and area requirement.

Due to the ever-growing problems faced by conventional memories with Dynamic Voltage Scaling (DVS), emerging memory technologies gained more importance. RRAM is typically seen as a possible candidate to replace Non-volatilememory (NVM) as Flash approaches its scaling limits. The replacement of SRAMin the lowest layers of the memory hierarchies in embedded systems with RRAMis very attractive research topic; RRAM technology offers reduced energy and arearequirements, but it has limitations with regards to endurance and write latency.

By reason of the technological limitations and restrictions to solve RRAM write related issues, it becomes beneficial to explore memory access schemes that tolerate the longer write times. Therefore, since RRAM write time cannot be reduced realistically speaking we have to derive instruction memory and data memory access schemes that tolerate the longer write times. We present an instruction memory access scheme to compromise with these problems.

In addition to modified instruction memory architecture, we investigate the effect of the longer write times to the data memory. Experimental results provided show that the proposed architectural modifications can reduce read energy consumption by a significant frame without any performance penalty.

Place, publisher, year, edition, pages
2013. , 99 p.
Keyword [en]
Resistive RAM(RRAM), Static RAM (SRAM), Non-volatile memory(NVM), Coarse Grained Reconfigurable Array (CGRA)
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-92819ISRN: LiTH-ISY-EX--12/4628--SEOAI: diva2:623005
External cooperation
Subject / course
Electronics Systems
2012-09-20, Algorithmen, Linkoping, 11:15 (English)
Available from: 2013-05-24 Created: 2013-05-23 Last updated: 2013-05-24Bibliographically approved

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