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Defects in N, O and N, Zn implanted ZnO bulk crystals
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
University of Florida, FL USA .
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2013 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 113, no 10, 103509- p.Article in journal (Refereed) Published
Abstract [en]

Comprehensive characterization of defects formed in bulk ZnO single crystals co-implanted with N and Zn as well as N and O atoms is performed by means of optically detected magnetic resonance (ODMR) complemented by Raman and photoluminescence (PL) spectroscopies. It is shown that in addition to intrinsic defects such as Zn vacancies and Zn interstitials, several N-related defects are formed in the implanted ZnO. The prevailed configuration of the defects is found to depend on the choices of the co-implants and also the chosen annealing ambient. Specifically, co-implantation with O leads to the formation of (i) defects responsible for local vibrational modes at 277, 511, and 581 cm−1; (ii) a N-related acceptor with the binding energy of 160 ± 40 meV that is involved in the donor-acceptor pair emission at 3.23 eV; and (iii) a deep donor and a deep NO acceptor revealed from ODMR. Activation of the latter defects is found to require post-implantation annealing in nitrogen ambient. None of these defects are detected when N is co-implanted with Zn. Under these conditions, the dominant N-induced defects include a deep center responsible for the 3.3128 eV PL line, as well as an acceptor center of unknown origin revealed by ODMR. Formation mechanisms of the studied defects and their role in carrier recombination are discussed.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2013. Vol. 113, no 10, 103509- p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-91343DOI: 10.1063/1.4795261ISI: 000316565600020OAI: oai:DiVA.org:liu-91343DiVA: diva2:617252
Note

Funding Agencies|Swedish Research Council|621-2010-3971|

Available from: 2013-04-22 Created: 2013-04-22 Last updated: 2017-12-06Bibliographically approved

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