Formation of α-approximant and quasicrystalline Al-Cu-Fe thin films
2012 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 526, 74-80 p.Article in journal (Refereed) Published
Multilayered Al/Cu/Fe thin films have been deposited by magnetron sputtering onto Si and Al2O3 substrates with a nominal global composition corresponding to the quasicrystalline phase, 5:2:1. Subsequent annealing was performed on the samples up to 710 degrees C. It is found that when using Si as a substrate a film-substrate reaction occurs already below 390 degrees C, where Si diffuses into the film. This changes the composition, promoting the formation of the alpha-approximant Al55Si7Cu25.5Fe12.5 in the temperature range 400 to 650 degrees C over the quasicrystalline psi-phase. When annealing the same Al-Cu-Fe thin film grown on Al2O3 substrates the Al62.5Cu25Fe12.5 icosahedral quasicrystalline phase is formed.
Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 526, 74-80 p.
Quasicrystal, Approximant, Al-Cu-Fe-Si, X-ray diffraction, Annealing, Phase evolution, Multilayer, Sputtering
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-89532DOI: 10.1016/j.tsf.2012.11.009ISI: 000313703200012OAI: oai:DiVA.org:liu-89532DiVA: diva2:608213
Funding Agencies|Swedish Foundation for Strategic Research (SSF) Strategic Research Center in Materials Science for Nanoscale Surface Engineering (MS2E)||2013-02-262013-02-262016-08-31