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Transition from silicon nanowires to isolated quantum dots: Optical and structural evolution
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Material Physics, MF.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Material Physics, MF.ORCID iD: 0000-0003-2562-0540
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2013 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 87, no 4, 045404- p.Article in journal (Refereed) Published
Abstract [en]

The evolution of the structural and optical properties of a silicon core in oxidized nanowalls is investigated as a function of oxidation time. The same individual nanostructures are characterized after every oxidation step in a scanning electron microscope and by low-temperature photoluminescence, while a representative sample is also imaged in a transmission electron microscope. Analysis of a large number of recorded single-dot spectra and micrographs allows to identify delocalized and localized exciton emission from a nanowire as well as confined exciton emission of a nanocrystal. It is shown how structural transitions from one-to zero-dimensional confinement affect single-nanostructure optical fingerprints.

Place, publisher, year, edition, pages
American Physical Society , 2013. Vol. 87, no 4, 045404- p.
Keyword [en]
Self-Limiting Oxidation, Electron-Phonon, Si Nanocrystals, Photoluminescence, Cells
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-117635DOI: 10.1103/PhysRevB.87.045404ISI: 000313158600005Scopus ID: 2-s2.0-84872242100OAI: oai:DiVA.org:kth-117635DiVA: diva2:602804
Funder
Swedish Research Council
Note

QC 20130204

Available from: 2013-02-15 Created: 2013-02-01 Last updated: 2017-12-06Bibliographically approved

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Bruhn-PhysRevB-2013(1854 kB)183 downloads
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