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Progress in 3C-SiC growth and novel applications
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Biosensors and Bioelectronics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2012 (English)In: Materials Science Forum Vol 711, Trans Tech Publications Inc., 2012, Vol. 711, 3-10 p.Conference paper, Published paper (Refereed)
Abstract [en]

Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed with an emphasis on the enhanced understanding of polytype stability in relation to growth conditions, such as supersaturation and Si/C ratio. It is shown that at low temperature/supersaturation spiral 6H-SiC growth is favored, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation is high enough, 3C-SiC nucleates as two-dimensional islands on terraces of the homoepitaxial 6H-SiC. Effect of different substrate surface preparations is considered. Typical extended defects and their electrical activity is discussed. Finally, possible novel applications are outlined.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 711, 3-10 p.
Keyword [en]
cubic SiC; nucleation control; supersaturation; sublimation growth; defects
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-87982DOI: 10.4028/www.scientific.net/MSF.711.3ISI: 000302673900001OAI: oai:DiVA.org:liu-87982DiVA: diva2:601001
Conference
HeteroSiC & WASMPE 2011
Available from: 2013-01-28 Created: 2013-01-28 Last updated: 2013-02-22

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Yakimova, RositsaVasiliauskas, RemigijusEriksson, JensSyväjärvi, Mikael
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