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Test och verifiering av en ny inkapslingsmetod för SiC BJT och MOSFET
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signals and Systems Group.
2012 (Swedish)Independent thesis Basic level (professional degree), 10 credits / 15 HE creditsStudent thesisAlternative title
Test and verification at a new packaging concept forSiC BJT and MOSFET (Swedish)
Abstract [en]

The use of silicon carbide (SiC) as a base material in power electronics has manyadvantages, including high breakdown voltage and excellent temperature endurance.However, the packaging of such electronics presents major challenges and there is aneed for packaging that can operate in higher temperature. The purpose of this thesishas been to develop a test method and verify the functionality of SiC powertransistors prototypes with a new packaging technique developed by Swerea IVF AB.It includes setting up an electrical test-bed for power and high temperature cyclingand analysis of the results. Even though test confirmed functionality after thepackaging process, (at room temperature) the performance seemed to have been reduced. This could be a result of the measurement setup and the packaging process.In higher temperature the transistors failed to operate longer than a couple ofminutes which showed the weaknesses in the design and the challenges with this typeof packaging.

Place, publisher, year, edition, pages
2012. , 24 p.
Keyword [sv]
Kiselkarbid, SiC, transistor, inkapsling, test, elektronik, kraftelektronik
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-192201ISRN: UTH-INGUTB-EX-E-2012/16-SEOAI: oai:DiVA.org:uu-192201DiVA: diva2:589111
External cooperation
Swerea IVF
Educational program
Bachelor Programme in Electrical Engineering
Uppsok
Technology
Supervisors
Examiners
Available from: 2013-01-22 Created: 2013-01-16 Last updated: 2013-01-22Bibliographically approved

Open Access in DiVA

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