Theoretical Routes for c-BN Thin Film Growth
2013 (English)Doctoral thesis, comprehensive summary (Other academic)
c-BN has been in focus for several years due to its interesting properties. The possibility for large area CVD is a requirement for the realization of these different properties in various applications. Unfortunately, there are at present severe problems in the CVD growth of c-BN. The purpose with this research project has been to theoretically investigate, using DFT calculations, the possibility for a layer-by-layer CVD growth of c-BN. It could be established that, PEALD, using a BF3-H2-NH3-F2 pulse cycle and a diamond substrate, is a promising method for deposition of c-BN films. The gaseous species will decompose in the plasma and form BFx, H, NHx, and F species (x = 0, 1, 2, 3). The H and F radicals will uphold the cubic structure by completely hydrogenate, or fluorinate, the growing surface. However, surface radical sites will appear during the growth process as a result of atomic H, or F, abstraction reactions. The addition of NHx growth species (x = 0, 1, 2) to B radical sites, and BFx growth species (x = 0, 1, 2) to N radical sites, will then result in a continuous growth of c-BN.
Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2013. , 26 p.
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1012
cubic boron nitride, chemical vapor deposition, density functional theory, adsorption, abstraction
Research subject Inorganic Chemistry
IdentifiersURN: urn:nbn:se:uu:diva-191181ISBN: 978-91-554-8577-1OAI: oai:DiVA.org:uu-191181DiVA: diva2:586403
2013-02-27, Häggsalen, Lägerhyddsvägen 1, 75121, Uppsala, 15:15 (English)
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