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Transient photoreflectance of AlInN/GaN heterostructures
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Optics.ORCID iD: 0000-0002-4606-4865
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Optics.
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2012 (English)In: AIP Advances, ISSN 2158-3226, Vol. 2, no 4, 042148- p.Article in journal (Refereed) Published
Abstract [en]

Time-resolved photoreflectance (PR) in AlInN/GaN heterostructures was applied to study carrier dynamics at energies extending from the uniform AlInN alloy band gap to the band gap of GaN. PR at the AlInN band gap has been found to have subpicosecond decay. Such ultrafast carrier relaxation from the extended to the sub-band edge states implies that the localization sites are small and dense, most probably originating from the In-rich clusters. At energies below the AlInN band gap, a complicated energy dependence of the PR signal is attributed to the properties of the localized states and to the modulation of the interface electric field by photoexcitation.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2012. Vol. 2, no 4, 042148- p.
Keyword [en]
aluminium compounds, carrier relaxation time, energy gap, gallium compounds, III-V semiconductors, indium compounds, localised states, photoexcitation, photoreflectance, semiconductor heterojunctions, time resolved spectra, wide band gap semiconductors
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-107880DOI: 10.1063/1.4768670ISI: 000312828700061Scopus ID: 2-s2.0-84871875882OAI: oai:DiVA.org:kth-107880DiVA: diva2:578373
Funder
Swedish Research CouncilKnut and Alice Wallenberg Foundation
Note

QC 20130109

Available from: 2013-01-09 Created: 2012-12-18 Last updated: 2013-02-04Bibliographically approved

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