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Multi-wavelength Raman characterization of back-gated monolayer and bilayer graphene
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE).
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE).
2012 (English)Independent thesis Advanced level (degree of Master (One Year)), 10 credits / 15 HE creditsStudent thesis
Abstract [en]

In this work, we investigate the Raman spectrum of gated monolayer and bilayergraphene devices. We used Raman spectroscopy with three different excitationwavelengths: (488nm, 514nm and 633nm).For monolayer devices we observedthe expected behavior for doped devices. For bilayer devices, we present acomparison between the theoretical model and our experimental results.

Place, publisher, year, edition, pages
2012. , 27 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:hh:diva-20055Local ID: IDE1268OAI: oai:DiVA.org:hh-20055DiVA: diva2:573745
Subject / course
Electrical Engineering
Uppsok
Technology
Supervisors
Examiners
Available from: 2012-12-04 Created: 2012-12-03 Last updated: 2012-12-04Bibliographically approved

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Multi-wavelength Raman characterization of back-gated monolayer and bilayer graphene(1029 kB)497 downloads
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Arvani, MaedehAghajanloo, Mahdi
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CiteExportLink to record
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  • apa
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  • de-DE
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Output format
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