Beam-induced crystallization of amorphous Me-Si-C (Me = Nb or Zr) thin films during transmission electron microscopy
2013 (English)In: MRS COMMUNICATIONS, Vol. 3, no 3, 151-155 p.Article in journal (Refereed) Published
We report that an electron beam focused for high-resolution imaging rapidly initiates observable crystallization of amorphous Me-Si-C films. For 200-keV electron irradiation of Nb-Si-C and Zr-Si-C films, crystallization is observed at doses of similar to 2.8 x 10(9) and similar to 4.7 x 10(9) e(-)/nm(2), respectively. The crystallization process is driven by atomic displacement events, rather than heating from the electron beam as in situ annealing (400-600 degrees C) retains the amorphous state. Our findings demand a critical analysis of alleged amorphous and nanocrystalline ceramics including reassessing previous reports on nanocrystalline Me-Si-C films for possible electron-beam-induced crystallization effects.
Place, publisher, year, edition, pages
Cambridge University Press, 2013. Vol. 3, no 3, 151-155 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-85829DOI: 10.1557/mrc.2013.31ISI: 000325095100007OAI: oai:DiVA.org:liu-85829DiVA: diva2:572982