Layer-by-layer 3D printing of Si micro- and nanostructures by Si deposition, ion implantation and selective Si etching
2012 (English)In: 12th IEEE Conference on Nanotechnology (IEEE-NANO), 2012, IEEE conference proceedings, 2012, 1-4 p.Conference paper (Refereed)
In this paper we report a method for layer-by-layer printing of three-dimensional (3D) silicon (Si) micro- and nanostructures. This fabrication method is based on a sequence of alternating steps of chemical vapor deposition of Si and local implantation of gallium (Ga+) ions by focused ion beam (FIB) writing. The defined 3D structures are formed in a final step by selectively wet etching the non-implanted Si in potassium hydroxide (KOH). We demonstrate the viability of the method by fabricating 2 and 3-layer 3D Si structures, including suspended beams and patterned lines with dimensions on the nm-scale.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2012. 1-4 p.
3D silicon patterning, 3D Si printing, focused ion beam (FIB) writing, ion implantation, microstructures, nanostructures, MEMS, NEMS
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-105842DOI: 10.1109/NANO.2012.6322048ISI: 000309933900163ScopusID: 2-s2.0-84869188480ISBN: 978-1-4673-2198-3OAI: oai:DiVA.org:kth-105842DiVA: diva2:572474
2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO),The International Conference Centre Birmingham,20-23 August 20112, Birmingham, United Kingdom
FunderEU, European Research Council, 277879
QC 201301102013-01-102012-11-272013-11-12Bibliographically approved