Sub-millisecond dynamic nuclear spin hyperpolarization in a semiconductor: A case study from PIn antisite in InP
2012 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 86, no 20, 205202-1-205202-6 p.Article in journal (Refereed) Published
Optically detected magnetic resonance is employed to identify key factors governing dynamic nuclear polarization (DNP) in a semiconductor. We demonstrate that the extent of DNP can be efficiently controlled by varying lifetime of the localized electrons that transfer spin angular momentum to nuclei. The ultimate speed of a DNP process, on the other hand, is determined by the strength of hyperfine interaction that drives DNP. We show that about 50% nuclear spin polarization of a PIn antisite in InP can be achieved by shortening electron lifetime within a remarkably short time (<0.1 ms) due to strong hyperfine coupling.
Place, publisher, year, edition, pages
American Physical Society , 2012. Vol. 86, no 20, 205202-1-205202-6 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-85472DOI: 10.1103/PhysRevB.86.205202ISI: 000310988700001OAI: oai:DiVA.org:liu-85472DiVA: diva2:570646
funding agencies|Swedish Research Council|621-2011-4254|National Basic Research Program of China|2011CB925604|2012-11-202012-11-202013-10-02